bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldta114get1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldta114get1g ldta114get1g q1 z a b so lu te maximu m ratin g s (t a= 25 c) z electrical ch aracteristics (t a= 25 c) q1 10 10 3 collec t or 2 emitter 1 base r2 ? ? parameter symbol v cbo v ceo v ebo i c pc tj tstg limits ? 50 ? 50 ? 5 ? 100 200 150 ? 55 to + 150 unit v v v ma mw c c storage temperature emitter-base voltage collector-base voltage collector-emitter voltage collector current collector power dissipation junction temperature parameter symbol min. typ. max. unit conditions bv cbo ? 50 ?? vi c = ? 50 a i c = ? 1ma i e = ? 720 a v cb = ? 50v i c = ? 10ma, i b = ? 0.5ma v eb = ? 4v v ce = ? 10v, i e = 50ma, f = 100mhz bv ceo ? 50 ?? v bv ebo ? 5 ?? v i cbo ??? 0.5 a v ce(sat) ??? 0.3 v i ebo ? 300 ?? 580 a i c = ? 5ma, v ce = ? 5v h fe 30 ?? ? f t ? 250 10 ? mhz ? r 1 713k ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio emitter-base resistance transition frequency ? transition frequency of the device. ? 1 2 3 sc-89
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldta114get1g 100 200 500 20 50 2 5 10 0.5 2 5 1 10 20 50 100 ta=25?c v o =5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (ma) 1000 200 500 100 10 20 50 1 2 5 10 20 50 100 ta=25 ? c fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage: v ce (sat)(mv) collector current : v ds (v) i c / i b = 20 / 1 i c / i b = 10 / 1
leshan radio company, ltd. 3/3 ldta114get1g notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
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